We propose a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 µm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 µm × 15 µm × 20 µm (length × width × thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.

References :
Hidetoshi Takahashi, Akihito Nakai, Kiyoshi Matsumoto, and Isao Shimoyama, “Shear force detector using piezo-resistive beams with sidewall-doping,” The 25th IEEE International Conference on Micro Electro Mechanical Systems (MEMS ’12), pp. 599 - 602 , Paris, France, Jan. 29 - Feb. 2, 2012.[Proceedings]