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This research reports on a method of carbon nanotubes (CNTs) placement on a silicon wafer by stamping transfer for integration of specified
CNTs onto specified positions. CNTs which directly synthesized between the gaps of silicon microstructures were picked up by a polydimethylsiloxane (PDMS)
stamp sheet and placed on a silicon wafer. Raman spectroscopy revealed that the placed CNTs had little defect on their surface condition.
From the measurement of the current-voltage characteristics, we verified that the CNTs placed on the electrode were electrically connected to the electrode.
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